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Hermetically Sealed Optocoupler OPTEK JAN4N49 Designed for Electrical Isolation in Harsh Environments

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Hermetically Sealed Optocoupler OPTEK JAN4N49 Designed for Electrical Isolation in Harsh Environments

Rise time : 20us

Output Current : -

Fall time : 20us

Vce Saturation(VCE(sat)) : 300mV@20mA,2.5mA

Operating Temperature : -55℃~+125℃

Load Voltage : -

Reverse Voltage : -

Current transfer ratio : -;-

Forward Current(If) : -

Pd - Power Dissipation : -

Number of Channels : -

Load Type : -

Input type : -

Isolation Voltage(Vrms) : -

Description : 300mV@20mA,2.5mA TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : JAN4N49

Model Number : JAN4N49

Package : TO-78-6

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Hi-Reliability Optically Coupled Isolator

This series of optically coupled isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for and harsh environments, these devices offer high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. The suffix 'S' denotes that the collector is electrically isolated from the case. Devices with part numbers including J, JDY, or JDYS are processed to MIL-PRF-19500/486 and are JANTX registered and JAN qualified.

Product Attributes

  • Brand: ADI Electronics plc
  • Certifications: JANTX Registered, JAN Qualified (for J/JDY/JDYS series)
  • Patent No: 4124860
  • Package: TO-78 Hermetically Sealed
  • Origin: Plano, TX 75074

Technical Specifications

Part Number Isolation Voltage (kV) IF (mA) Typ/Max V CE(V) Max IF (mA) VCE (V) IC (mA) hFE R DI O () C DIO (pF) tr/tf (s)
J4E22 (Obsolete) 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
JDY4E22 (Obsolete) 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
JDYS4E22 (Obsolete) 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
J4E23 (Obsolete) 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
JDY4E23 (Obsolete) 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
JDYS4E23 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
J4E24 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
JDY4E24 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
JDYS4E24 (Obsolete) 1 10 / 40 40 10 5 2.5 100 1011 5 20.0
J4E22 1 10 / 40 40 10 5 1.00 100 1011 5 20.0
JDY4E22 1 10 / 40 40 10 5 1.00 100 1011 5 20.0
JDYS4E22 1 10 / 40 40 10 5 1.00 100 1011 5 20.0
J4E23 1 10 / 40 40 10 5 2.50 100 1011 5 20.0
JDY4E23 1 10 / 40 40 10 5 2.50 100 1011 5 20.0
JDYS4E23 1 10 / 40 40 10 5 2.50 100 1011 5 20.0
J4E24 1 10 / 40 40 10 5 4.00 100 1011 5 20.0
JDY4E24 1 10 / 40 40 10 5 4.00 100 1011 5 20.0
JDYS4E24 1 10 / 40 40 10 5 4.00 100 1011 5 20.0

Absolute Maximum Ratings

Parameter Rating Unit
Storage Temperature Range -65 to 150 C
Operating Temperature Range -55 to +125 C
Input-to-Output Isolation Voltage 1.00 kV
Lead Soldering Temperature 260 C
Input Diode Forward Current 40 mA
Input Diode Reverse Voltage 2 V
Peak Forward Current (1s pulse width, 300pps) 1 A
Input Power Dissipation 60 mW
Continuous Collector Current 50 mA
Collector-Emitter Voltage 40 V
Collector-Case Voltage 45 V
Emitter-Case Voltage 4 V
Output Power Dissipation 300 mW

Electrical Characteristics

Symbol Parameter Test Conditions J/JDY/JDYS 4E22 J/JDY/JDYS 4E23 J/JDY/JDYS 4E24 Unit
VF Forward Voltage IF = 10.0 mA 1.50 1.30 1.30 V
IR Reverse Current VR = 2.0 V 100 100 100 nA
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, II = 0 40 40 40 V
V(BR)CES Collector-Base Breakdown Voltage IC = 100 A, II = 0 45 45 45 V
V(BR)ECO Emitter-Base Breakdown Voltage IE = 100 A, II = 0 7 7 7 V
IO(OFF) Collector-Emitter Dark Current VCE = 20 V, II = 0 100 100 100 nA
IO(OFF) Collector-Base Dark Current VCE = 20 V, II = 0 100 100 100 nA
IC(ON) On-State Collector Current IF = 10.0 mA, VCE = 5 V 1.00 2.50 4.00 mA
hFE Current Gain IC = 5.0 mA, IF = 10.0 mA 100 100 100
R DIO Diode Resistance (Input-to-Output) 1011 1011 1011
C DIO Diode Capacitance (Input-to-Output) VISO = 0 V, f = 1.0 MHz 5 5 5 pF
tr/tf Output Rise and Fall Time RL = 100 k 20.0 20.0 20.0 s

2411272144_OPTEK-JAN4N49_C17538211.pdf


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