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OPTEK JANTXV4N48 Optically Coupled Isolator Providing Electrical Isolation for Harsh and Dirty Environments

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OPTEK JANTXV4N48 Optically Coupled Isolator Providing Electrical Isolation for Harsh and Dirty Environments

Rise time : 20us

Output Current : 50mA

Fall time : 20us

Vce Saturation(VCE(sat)) : 300mV@20mA,2.5mA

Operating Temperature : -55℃~+125℃

Load Voltage : 40V

Reverse Voltage : 2V

Current transfer ratio : -;-

Forward Current(If) : 40mA

Pd - Power Dissipation : 300mW

Number of Channels : -

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 1kV

Description : 50mA 300mV@20mA,2.5mA 40V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : JANTXV4N48

Model Number : JANTXV4N48

Package : TO-78-6

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Hi-Reliability Optically Coupled Isolator

This series of optically coupled isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for and harsh environments, these devices offer high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. The suffix "S" denotes that the collector is electrically isolated from the case. Devices like the J/JD/JDS 4E22, 4E23, and 4E24 are processed to MIL-STD-19500/486 and are JANTX registered and JAN qualified.

Product Attributes

  • Brand: ABB Electronics plc
  • Certifications: JANTX registered, JAN qualified (for 4E series)
  • Patent No.: 4124860
  • Package: TO-78 hermetically sealed

Technical Specifications

Part Number Isolation Voltage (kV) IF (mA) Typ/Max VCE (Volts) Max MIL-STD-19500 Processing
J4E22 / JD4E22 (Obsolete) 1 10 / 40 40 MIL-STD-19500/486
JDY4E22 / JDYS4E22 (Obsolete) 1 10 / 40 40 MIL-STD-19500/486
J4E23 / JD4E23 (Obsolete) 1 10 / 40 40 MIL-STD-19500/486
JDY4E23 / JDYS4E23 1 10 / 40 40 MIL-STD-19500/486
J4E24 1 10 / 40 40 MIL-STD-19500/486
JDY4E24 / JDYS4E24 (Obsolete) 1 10 / 40 40 MIL-STD-19500/486
Parameter Symbol Test Conditions J/JD/JDS 4E22 J/JD/JDS 4E23 J/JD/JDS 4E24 Units
Input Diode Forward Voltage VF IF = 10.0 mA 1.50 - 1.70 1.50 - 1.70 1.50 - 1.70 V
Input Diode Reverse Current IR VR = 2.0 V 100 100 100 nA
Output Phototransistor Breakdown Voltage Collector-Emitter V(BR)CEO IC = 1.0 mA, IF = 0 40 40 40 V
Output Phototransistor Breakdown Voltage Collector-Base V(BR)CBO IC = 100 uA, IF = 0 45 45 45 V
Output Phototransistor Breakdown Voltage Emitter-Base V(BR)EBO IE = 100 uA, IF = 0 7 7 7 V
Collector-Emitter Dark Current IO(OFF) VCE = 20 V, IF = 0 100 100 100 nA
Collector-Base Dark Current IO(OFF) VCE = 20 V, IF = 0 100 100 100 nA
On-State Collector Current IC(ON) IF = 2.0 mA, VCE = 5 V 1.00 2.50 4.00 mA
Current Transfer Ratio CTR IF = 10.0 mA, VCE = 5 V 100 100 100 %
Isolation Resistance (Input-to-Output) RIO 10^11 10^11 10^11
Isolation Capacitance (Input-to-Output) CIO f = 1.0 MHz 5 5 5 pF
Output Rise and Fall Time tr, tf IF = 10.0 mA, RL = 100 20.0 20.0 20.0 s

2411272144_OPTEK-JANTXV4N48_C17670562.pdf


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